Samsung unveiled the world’s first DDR5 DRAM chipsmanufactured using the 12 nm semiconductor manufacturing technology. The company unveiled its 16GB DDR5 DRAM chips and said their compatibility with AMD’s Zen processors had already been replaced.
These new chips are more power efficient and deliver 23% better performance than previous generation DRAM chips. The South Korean firm said this technological leap was made possible through the use of a high-VA material that increases cell capacity. Samsung has also used its proprietary technology to improve critical circuitry.
The company’s new DDR5 DRAM chips use advanced multi-layer lithography to achieve the highest die density in the industry and enable 20% higher wafer productivity. These chips are capable of data transmission speeds of up to 7.2 Gb/swhich is equivalent to processing two 30GB 4K movies in a single second.
Samsung will begin mass production of its 12nm-class DDR5 DRAM chips in early 2023. We can expect products based on these DRAM chips in Q4 2023.
Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics, said:
Our 12nm range DRAM will be a key driver in driving market adoption of DDR5 DRAM. With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.