Samsung has developed the first DDR5 DRAM engraved in 12 nm

These 16GB memory chips consumed up to 23% less power than the older generation and would deliver a 20% increase in productivity per wafer. Mass production is due to begin next year.

Samsung Electronics has announced that it has developed 16 GB DDR5 DRAM chips based on the 12 nanometer process, a first for this sector. These devices offer a throughput of 7.2 Gbit/s (DDR5-7200).


The company being considered claims that these 16GB DDR5 memory chips consume up to 23% less power than the previous generation. They also improve productivity in increments of 20%. According to Samsung, this “technological leap has been made possible through the use of a new high-κ material that increases cell capacity, and proprietary design technology that improves critical circuit characteristics.” These improvements, combined with advanced multi-layer extreme ultraviolet (EUV) lithography, result in the highest density DRAM on the market, and a 20% increase in productivity.

Samsung launches 8.5 Gbps LPPD5X DRAM

DRAM requirements on AMD Zen platforms

“Our 12nm DRAM will be a key driver of market adoption of DDR5 DRAM. With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems. said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics.

Details on the evaluation of the products involved by the AMD Zen platforms. On this subject, Joe Macri, Vice President and Branch Manager Calculation and graphs from AMD, reports: “Innovation often requires close collaboration with industrial partners to push the boundaries of technology. We are delighted to once again be working with Samsung, especially for the launch of optimized and validated DDR5 memory products on “Zen” platforms.

Mass production is due to begin in 2023, without further details.

Source: Samsung

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